| Specifications |
| Manufacturer | INFINEON TECHNOLOGIES |
| Type of transistor | N-MOSFET |
| Technology | OptiMOS™ 3 |
| Polarisation | unipolar |
| Drain-source voltage | 200V |
| Drain current | 88A |
| Power dissipation | 300W |
| Case | PG-TO263-3 |
| Gate-source voltage | ±20V |
| On-state resistance | 10.7mΩ |
| Mounting | SMD |
| Kind of channel | enhancement |
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