Transistor P-MOSFET, unipolar, -30V, -1.3A, 0.5W, SuperSOT-3 - 0.17 EUR : acdcshop.gr - Online shopping

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  Catalog » Semiconductors » Transistor / Fet » FET : Transistor P-MOSFET, unipolar, -30V, -1.3A, 0.5W, SuperSOT-3  [Log In
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Transistor N-MOSFET - Transistor  N-MOSFET, unipolar, 300V, 36A, 300W, TO3P
Transistor N-MOSFET - Transistor N-MOSFET, unipolar, 300V, 36A, 300W, TO3P
Final price: 5.78 €
     
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Transistor N-MOSFET - Transistor  N-MOSFET, SuperMESH3™, unipolar, 620V, 2A, 70W, I2PAK
Transistor N-MOSFET - Transistor N-MOSFET, SuperMESH3™, unipolar, 620V, 2A, 70W, I2PAK
Final price: 0.48 €
     
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Transistor P-FET - Transistor P-MOSFET, unipolar, -30V, -1.3A, 0.5W, SuperSOT-3

Prod code: 36209

FDN352AP PDF

FDN352AP

Price:  0.33 €
VAT:  0.03 €
Final price with tax:  0.41 € 0.17 €
Amount:   
Usually shipped within 1 business day.
Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage -30V
Drain current -1.3A
Power dissipation 0.5W
Case SuperSOT-3
Gate-source voltage ±25V
On-state resistance 400mΩ
Mounting SMD
Gate charge 1.9nC
Kind of package reel,   tape
Kind of channel enhanced
Features of semiconductor devices logic level
Gross weight 0.023 g
 
Availability: On stock
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Manufacturers--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
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